Wide-Range Band-Gap Tuning and High Electrical Conductivity in La- and Pb-Doped SrSnO3 Epitaxial Films | ACS Applied Materials & Interfaces
Band gap of C3N4 in the GW approximation - ScienceDirect
Band gap narrowing and radiative efficiency of silicon doped GaN
Structural band-gap tuning in g-C3N4 - Physical Chemistry Chemical Physics (RSC Publishing)
Band gap of C3N4 in the GW approximation - ScienceDirect
Tuning the Electronic Band Gap of Oxygen-Bearing Cubic Zirconium Nitride: c-Zr3–x(N1–xOx)4 | ACS Applied Electronic Materials
Wide-Range Band-Gap Tuning and High Electrical Conductivity in La- and Pb-Doped SrSnO3 Epitaxial Films | ACS Applied Materials & Interfaces
Wide-Range Band-Gap Tuning and High Electrical Conductivity in La- and Pb-Doped SrSnO3 Epitaxial Films | ACS Applied Materials & Interfaces
Band gap narrowing and radiative efficiency of silicon doped GaN
Narrow Gap Semiconductors 1995
Band gap determination of graphene, h-boron nitride, phosphorene, silicene, stanene, and germanene nanoribbons - IOPscience
Transition of wide-band gap semiconductor h-BN(BN)/P heterostructure via single-atom-embedding - Journal of Materials Chemistry C (RSC Publishing)
PDF) C 3 H 2 : A wide-band-gap semiconductor with strong optical absorption
Band gap determination of graphene, h-boron nitride, phosphorene, silicene, stanene, and germanene nanoribbons - IOPscience
Wide-Range Band-Gap Tuning and High Electrical Conductivity in La- and Pb-Doped SrSnO3 Epitaxial Films | ACS Applied Materials & Interfaces
Band-Gap Engineering in High-Temperature Boron-Rich Icosahedral Compounds | The Journal of Physical Chemistry C
Band gap of C3N4 in the GW approximation - ScienceDirect
Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation - ScienceDirect
Band gap narrowing and radiative efficiency of silicon doped GaN
Tuning the Electronic Band Gap of Oxygen-Bearing Cubic Zirconium Nitride: c-Zr3–x(N1–xOx)4 | ACS Applied Electronic Materials
Band-Gap Engineering in High-Temperature Boron-Rich Icosahedral Compounds | The Journal of Physical Chemistry C
Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation - ScienceDirect
